? 2013 ixys corporation, all rights reserved IXYH50N120C3D1 v ces = 1200v i c100 = 50a v ce(sat) 4.0v t fi(typ) = 43ns ds100388c(02/13) g = gate c = collector e = emitter tab = collector to-247 ad g c e tab high-speed igbt for 20-50 khz switching symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0v 1200 v v ge(th) i c = 250 a, v ce = v ge 3.0 5.0 v i ces v ce = v ces , v ge = 0v 50 a t j = 125 c 500 a i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = 50a, v ge = 15v, note 1 4.0 v t j = 150 c 4.2 v symbol test conditions maximum ratings v ces t j = 25c to 150c 1200 v v cgr t j = 25c to 150c, r ge = 1m 1200 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c (chip capability) 90 a i c100 t c = 100c 50 a i f110 t c = 110c 25 a i cm t c = 25c, 1ms 210 a ssoa v ge = 15v, t vj = 150c, r g = 5 i cm = 100 a (rbsoa) clamped inductive load @v ce v ces p c t c = 25c 625 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062in.) from case for 10s 260 c m d mounting torque 1.13/10 nm/lb.in. weight 6g features z optimized for low switching losses z square rbsoa z positive thermal coefficient of vce(sat) z anti-parallel ultra fast diode z high current handling capability z international standard package advantages z high power density z low gate drive requirement applications z high frequency power inverters z ups z motor drives z smps z pfc circuits z battery chargers z welding machines z lamp ballasts 1200v xpt tm igbt genx3 tm w/ diode
ixys reserves the right to change limits, test conditions, and dimensions. IXYH50N120C3D1 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 e ? p to-247 (ixyh) outline 1 2 3 terminals: 1 - gate 2 - collector 3 - emitter dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = 50a, v ce = 10v, note 1 20 32 s c ie s 3100 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 230 pf c res 66 pf q g(on) 142 nc q ge i c = 50a, v ge = 15v, v ce = 0.5 ? v ces 23 nc q gc 60 nc t d(on) 28 ns t ri 62 ns e on 3.0 mj t d(off) 133 ns t fi 43 ns e of f 1.0 1.7 mj t d(on) 28 ns t ri 68 ns e on 6.0 mj t d(off) 160 ns t fi 60 ns e off 1.4 mj r thjc 0.20 c/w r thcs 0.21 c/w inductive load, t j = 25c i c = 50a, v ge = 15v v ce = 0.5 ? v ces , r g = 5 note 2 inductive load, t j = 150c i c = 50a, v ge = 15v v ce = 0.5 ? v ces , r g = 5 note 2 notes: 1. pulse test, t 300 s, duty cycle, d 2%. 2. switching times & energy losses may increase for higher v ce (clamp), t j or r g . (t j = 25c, unless otherwise specified) characteristic value symbol test conditions min. typ. max. v f 3.00 v t j = 150c 1.75 v i rm 9 a t rr 195 ns r thjc 0.90 c/w i f = 30a,v ge = 0v, -di f /dt = 100a/ s, t j = 100c v r = 600v t j = 100c i f = 30a,v ge = 0v, note 1 reverse diode (fred)
? 2013 ixys corporation, all rights reserved IXYH50N120C3D1 fig. 1. output characteristics @ t j = 25oc 0 10 20 30 40 50 60 70 80 90 100 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 v ce - volts i c - amperes v ge = 15v 13v 11v 10v 9v 8v 7v 6v fig. 2. extended output characteristics @ t j = 25oc 0 50 100 150 200 250 0 5 10 15 20 25 v ce - volts i c - amperes v ge = 15v 10v 8v 11v 12v 7v 6v 9v 14v 13v fig. 3. output characteristics @ t j = 150oc 0 10 20 30 40 50 60 70 80 90 100 012345678 v ce - volts i c - amperes 8v 7v 6v 5v v ge = 15v 13v 12v 11v 10v 9v fig. 4. dependence of v ce(sat) on junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 50a i c = 25a i c = 100a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1.5 2.5 3.5 4.5 5.5 6.5 7.5 8.5 6 7 8 9 10 11 12 13 14 15 v ge - volts v ce - volts i c = 100 a t j = 25oc 50 a 25 a fig. 6. input admittance 0 10 20 30 40 50 60 70 80 90 100 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 v ge - volts i c - amperes t j = 150oc 25oc - 40oc
ixys reserves the right to change limits, test conditions, and dimensions. IXYH50N120C3D1 fig. 7. transconductance 0 4 8 12 16 20 24 28 32 36 40 44 0 102030405060708090100 i c - amperes g f s - siemens t j = - 40oc 25oc 150oc fig. 10. reverse-bias safe operating area 0 20 40 60 80 100 200 400 600 800 1000 1200 v ce - volts i c - amperes t j = 150oc r g = 5 ? dv / dt < 10v / ns fig. 11. maximum transient thermal impedance 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 pulse width - second z (th)jc - oc / w fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 20 40 60 80 100 120 140 q g - nanocoulombs v ge - volts v ce = 600v i c = 50a i g = 10ma fig. 9. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mhz c ies c oes c res
? 2013 ixys corporation, all rights reserved IXYH50N120C3D1 fig. 12. inductive switching energy loss vs. gate resistance 0 1 2 3 4 5 6 5 1015202530 r g - ohms e off - millijoules 0 5 10 15 20 25 30 e on - millijoules e off e on - - - - t j = 150oc , v ge = 15v v ce = 600v i c = 50a i c = 100a fig. 15. inductive turn-off switching times vs. gate resistance 20 40 60 80 100 120 140 5 1015202530 r g - ohms t f i - nanoseconds 0 100 200 300 400 500 600 t d ( off ) - nanoseconds t f i t d(off) - - - - t j = 150oc, v ge = 15v v ce = 600v i c = 100a i c = 50a fig. 13. inductive switching energy loss vs. collector current 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 20 30 40 50 60 70 80 90 100 i c - amperes e off - millijoules 0 3 6 9 12 15 18 21 e on - millijoules e off e on - - - - r g = 5 ? , v ge = 15v v ce = 600v t j = 150oc t j = 25oc fig. 14. inductive switching energy loss vs. junction temperature 0 1 2 3 4 5 25 50 75 100 125 150 t j - degrees centigrade e off - millijoules 0 4 8 12 16 20 e on - millijoules e off e on - - - - r g = 5 ? , v ge = 15v v ce = 600v i c = 50a i c = 100a fig. 16. inductive turn-off switching times vs. collector current 0 20 40 60 80 100 120 140 160 20 30 40 50 60 70 80 90 100 i c - amperes t f i - nanoseconds 80 100 120 140 160 180 200 220 240 t d ( off ) - nanoseconds t f i t d(off) - - - - r g = 5 ? , v ge = 15v v ce = 600v t j = 125oc t j = 25oc fig. 17. inductive turn-off switching times vs. junction temperature 20 40 60 80 100 120 140 160 25 50 75 100 125 150 t j - degrees centigrade t f i - nanoseconds 110 120 130 140 150 160 170 180 t d ( off ) - nanoseconds t f i t d(off) - - - - r g = 5 ? , v ge = 15v v ce = 600v i c = 100a i c = 50a
ixys reserves the right to change limits, test conditions, and dimensions. IXYH50N120C3D1 ixys ref: ixy_50n120c3d1(6n)05-04-12 fig. 21. maximum transient thermal impedance (diode) 0.0001 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 pulse width - second z (th)jc - oc / w fig. 19. inductive turn-on switching times vs. collector current 0 40 80 120 160 200 240 20 30 40 50 60 70 80 90 100 i c - amperes t r i - nanoseconds 20 24 28 32 36 40 44 t d ( on ) - nanoseconds t r i t d(on) - - - - r g = 5 ? , v ge = 15v v ce = 600v t j = 150oc, 25oc fig. 20. inductive turn-on switching times vs. junction temperature 0 40 80 120 160 200 240 25 50 75 100 125 150 t j - degrees centigrade t r i - nanoseconds 20 24 28 32 36 40 44 t d ( on ) - nanoseconds t r i t d(on) - - - - r g = 5 ? , v ge = 15v v ce = 600v i c = 100a i c = 50a fig. 18. inductive turn-on switching times vs. gate resistance 0 50 100 150 200 250 300 350 5 1015202530 r g - ohms t r i - nanoseconds 15 25 35 45 55 65 75 85 t d ( on ) - nanoseconds t r i t d(on) - - - - t j = 150oc, v ge = 15v v ce = 600v i c = 50a i c = 100a
? 2013 ixys corporation, all rights reserved IXYH50N120C3D1 fig. 22. forward current i f vs v f 0 10 20 30 40 50 60 70 0 0.5 1 1.5 2 2.5 3 3.5 4 v f [v] i f [a] 25oc t vj = 150oc 100oc fig. 23. reverse recovery charge q rm vs. -di f /dt 0 1 2 3 4 5 100 1000 -di f /dt [a/s] q rm [c] t vj = 100oc v r = 600v i f = 60a 15a 30a 500 fig. 24. peak reverse current i rm vs. -di f /dt 0 10 20 30 40 50 60 0 200 400 600 800 1000 -di f /dt [a/s] i rm [a] t vj = 100oc v r = 600v i f = 60a, 30a, 15a fig. 25. dynamic parameters q rm , i rm vs. t vj 0 0.5 1 1.5 2 20 40 60 80 100 120 140 160 t vj [oc] i rm & q rm [normalized] i rm q rm fig. 26. recovery time t rr vs. -di f /dt 120 140 160 180 200 220 0 200 400 600 800 1000 -di f /dt [a/s] t rr [ns] t vj = 100oc v r = 600v i f = 60a 30a 15a fig. 27. peak forward voltage v fr , trr vs -di f /dt 0 20 40 60 80 100 120 0 100 200 300 400 500 600 700 800 900 1000 -di f /dt [a/s] v fr [v] 0 0.2 0.4 0.6 0.8 1 1.2 t rr [s] t rr t vj = 100oc i f = 30a v fr
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